
BATTERY PROTECTION IC FOR 3-SERIAL OR 4-SERIAL CELL PACK
S-8243A/B Series
Rev.3.0_00
Seiko Instruments Inc.
10
Table 7 (2 / 2)
Item Symbol Remarks Min. Typ. Max. Unit Test circuit
INPUT CURRENT
Current consumption at not
monitoring V
BATOUT
I
OPE
V1 = V2 = V3 = V4 = 3.5 V, V
MP
= V
DD
−
65 120
μ
A 1
Current consumption at power down I
PDN
V1 = V2 = V3 = V4 = 1.5 V, V
MP
= V
SS
−
−
0.1
μ
A 1
Current for VCn at not monitoring
V
BATOUT
(n = 2, 3)
I
VCnN
V1 = V2 = V3 = V4 = 3.5 V
−
0.3 0 0.3
μ
A 3
Current for VC1 at monitoring of
V
BATOUT
I
VC1
V1 = V2 = V3 = V4 = 3.5 V
−
3.2 10.4
μ
A 3
Current for VC2 at monitoring of
V
BATOUT
I
VC2
V1 = V2 = V3 = V4 = 3.5 V
−
2.0 7.2
μ
A 3
Current for VC3 at monitoring of
V
BATOUT
I
VC3
V1 = V2 = V3 = V4 = 3.5 V, V
CTL1
= 0 V
−
1.0 4.0
μ
A 3
Current for CTL1 at Low I
CTL1L
V1 = V2 = V3 = V4 = 3.5 V, V
CTL1
= 0 V
−
0.4
−
0.2
−
μ
A 5
Current for CTLn at High
n = 2, 3, 4
I
CTLnH
V
CTLn
= V
OUT
−
2.5 5
μ
A 9
Current for CTLn at Low
n = 2, 3, 4
I
CTLnL
V
CTLn
= 0 V
−
5
−
2.5
−
μ
A 9
OUTPUT CURRENT
Leak current COP I
COH
V
COP
= 24 V
−
−
0.1
μ
A 9
Sink current COP I
COL
V
COP
= V
SS
+
0.5 V 10
−
−
μ
A 9
Source current DOP I
DOH
V
DOP
= V
DD
−
0.5 V 10
−
−
μ
A 9
Sink current DOP I
DOL
V
DOP
= V
SS
+
0.5 V 10
−
−
μ
A 9
Source current V
BATOUT
I
VBATH
V
BATOUT
= V
DD
−
0.5 V 100
−
−
μ
A 9
Sink current V
BATOUT
I
VBATL
V
BATOUT
= V
SS
+
0.5 V
100
−
−
μ
A 9
Applied to S-8243BAEFT, S-8243BAFFT, S-8243BAHFT
Item Symbol Conditions Min. Typ. Max. Unit Test circuit
DELAY TIME
Overcharge detection delay time t
CU
C
CT
= 0.1
μ
F 0.5 1.0 1.5 s 5
Overdischarge detection delay time t
DL
C
DT
= 0.1
μ
F 50 100 150 ms 5
Overcurrent detection delay time 1 t
lOV1
C
DT
= 0.1
μ
F 5 10 15 ms 5
Overcurrent detection delay time 2 t
lOV2
−
1.5 2.5 4.0 ms 4
Overcurrent detection delay time 3 t
lOV3
−
100 300 600
μ
s 4
Applied to S-8243BADFT
Item Symbol Conditions Min. Typ. Max. Unit Test circuit
DELAY TIME
Overcharge detection delay time t
CU
C
CT
= 0.1
μ
F 0.5 1.0 1.5 s 5
Overdischarge detection delay time t
DL
C
DT
= 0.1
μ
F 55.5 111 222 ms 5
Overcurrent detection delay time 1 t
lOV1
C
DT
= 0.1
μ
F 3.31 6.62 13.2 ms 5
Overcurrent detection delay time 2 t
lOV2
−
1.5 2.5 4.0 ms 4
Overcurrent detection delay time 3 t
lOV3
−
100 300 600
μ
s 4
*1.
Temperature coefficient for detection and release voltage is applied to overcharge detection voltage n, overcharge release voltage n, overdischarge
detection voltage n, and overdischarge release voltage n.
*2.
Temperature coefficient for overcurrent detection voltage is applied to over current detection voltage 1 and 2.
*3.
Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in
production.
Comentários a estes Manuais